2Amps,600/650 Volts N-CHANNEL MOSFET

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low Gate charge, low on-state resistance and have a high rugged avalanche characteristics. This Power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. By LianShun Electronics Co., Ltd
Part Manufacturer Description Datasheet Samples
SGU2N60UFDTU Rochester Electronics LLC Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-251, IPAK-3
SGR2N60UFDTM Rochester Electronics LLC Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3
SGR2N60UFDTF Rochester Electronics LLC Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3
2N60 's Packages2N60 's pdf datasheet
2N60-B-TA3-T
2N60L-B-TA3-T
2N60-B-TF3-T
2N60L-B-TF3-T
2N60-B-TM3-T
2N60L-B-TM3-T
2N60-B-TN3-R
2N60L-B-TN3-R
2N60-B-TN3-T
2N60L-B-TN3-T
2N60-A-TA3-T
2N60L-A-TA3-T
2N60-A-TF3-T
2N60L-A-TF3-T
2N60-A-TM3-T
2N60L-A-TM3-T
2N60-A-TN3-R
2N60L-A-TN3-R
2N60-A-TN3-T
2N60L-A-TN3-T




2N60 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
2N60 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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