Radiation Hardened N-Channel Power MOSFETs

The Harris Semiconductor Sector has designed a series of SECOND GENERA- TION hardened Power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V prod- uct. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current lim- iting and 2E12 with current limiting. Heavy ion survival from signal event drain burn-out exists for linear energy transfer (LET) of 35 at 80% of rated voltage. This MOSFET is an enhancement-mode silicon-gate power eld effect Transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n o) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. By Intersil Corporation
2N7288D 's Packages2N7288D 's pdf datasheet
2N7288R
2N7288H




2N7288D Pinout, Pinouts
2N7288D pinout,Pin out
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