MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

The 2SC3583 is an NPN epitaxial silicon Transistor designed for use in low-noise and Small Signal Amplifiers from VHF band to UHF band. Low- noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique. By NEC Electronics Inc.
2SC3583 's Packages2SC3583 's pdf datasheet



2SC3583 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
2SC3583 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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