4MB
  • Product pinout
  • Description
  • M69KB048BD,32 Mbit (2 Mb X16) 1.8 V Supply, Burst PSRAMs
  • The M69KB048BD and M69AB048BD are 32 Mbit (33 554 432 bit) CMOS memories, organized as 2 097 152 words by 16 bits, and supplied by a single 1.7 V to 1.95 V supply voltage range. They are particularly suited for mobile applications such as cellular ...
  • CY7C1423BV18,36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
  • The CY7C1422BV18, CY7C1429BV18, CY7C1423BV18, and CY7C1424BV18 are 1.8V Synchronous Pipelined SRAMs, equipped with Double Data Rate Separate IO (DDR-II SIO) architecture. The DDR-II SIO consists of two separate ports: the read port and the write port to ...
  • CY7C1420BV18,36-Mbit DDR-II SRAM 2-Word Burst Architecture
  • The CY7C1416BV18, CY7C1427BV18, CY7C1418BV18, and CY7C1420BV18 are 1.8V Synchronous Pipelined SRAM equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses ...
  • CY7C1415BV18,36-Mbit QDR-II SRAM 4-Word Burst Architecture
  • The CY7C1411BV18, CY7C1426BV18, CY7C1413BV18, and CY7C1415BV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR,-II architecture. QDR-II architecture consists of two separate ports to access the memory array. The read port has dedicated data outputs ...
  • CY7C1414BV18,36-Mbit QDR-II SRAM 2-Word Burst Architecture
  • The CY7C1410BV18, CY7C1425BV18, CY7C1412BV18, and CY7C1414BV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The ...
  • CY7C1414AV18,36-Mbit QDR-II? SRAM 2-Word Burst Architecture
  • The CY7C1410AV18, CY7C1425AV18, CY7C1412AV18, and CY7C1414AV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR,-II architecture. QDR-II architecture consists of two separate ports to access the memory array. The Read port has dedicated Data Outputs ...
  • CY7C1420AV18,36-Mbit DDR-II SRAM 2-Word Burst Architecture
  • The CY7C1416AV18, CY7C1427AV18, CY7C1418AV18 and CY7C1420AV18 are 1.8V Synchronous Pipelined SRAM equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for ...
  • CY7C1424AV18,36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
  • The CY7C1422V18, CY7C1429AV18, CY7C1423V18, CY7C1424V18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II SIO (Double Data Rate Separate I/O) architecture. The DDR-II SIO consists of two separate ports to access the memory array. The Read port has ...
  • CY7C1413AV18,36-Mbit QDR?-II SRAM 4-Word Burst Architecture
  • The CY7C1411AV18, CY7C1426AV18, CY7C1413AV18, and CY7C1415AV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR,-II architecture. QDR-II architecture consists of two separate ports to access the memory array. The Read port has dedicated Data Outputs ...
  • CY62177DV30,32-Mbit (2M X 16) Static RAM
  • The CY62177DV30 is a high-performance CMOS static RAM organized as 2M words by 16 bits. This device features advanced circuit design to provide ultra-low active current. ...
  • K1S321611C,2Mx16 Bit Uni-Transistor Random Access Memory
  • The K1S321611C is fabricated by SAMSUNG advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip ...
  • K1B1616B8B,1M X 16 Bit Multiplexed Uni-Transistor CMOS RAM
  • The world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNGs UtRAM products are desgned to meet all the request from the various customers who want to cope ...
  • K7S3236T4C,36Mb QDRII+ SRAM Specification
  • The K7S3236T4C and K7S3218T4C are37,748,736-bits QDR(Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7S3236T4C and 2,097,152 words by 18 bits for K7S3218T4C. The QDR operation is possible by supporting ...
  • K7R323682C,36Mb QDRII SRAM Specification
  • The K7R323682C,K7R321882C and K7R320982C are 37,748,736-bits QDR (Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7R323682C, 2,097,152 words by 18 bits for K7R321882C and 4,194,304 words by 9bits for ...
  • K7R321882C,36Mb QDRII SRAM Specification
  • The K7R323682C,K7R321882C and K7R320982C are 37,748,736-bits QDR (Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7R323682C, 2,097,152 words by 18 bits for K7R321882C and 4,194,304 words by 9bits for ...
  • K7R320982C,36Mb QDRII SRAM Specification
  • The K7R323682C,K7R321882C and K7R320982C are 37,748,736-bits QDR (Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7R323682C, 2,097,152 words by 18 bits for K7R321882C and 4,194,304 words by 9bits for ...
  • K7R323682M,TM 1Mx36-bit, 2Mx18-bit, 4Mx9-bit QDR II B2 SRAM
  • The K7R323682M,K7R321882M and K7R320982M are 37,748,736-bits QDR(Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7R323682M, 2,097,152 words by 18 bits for K7R321882M and 4,194,304 words by 9bits for ...
  • K7R321882M,TM 1Mx36-bit, 2Mx18-bit, 4Mx9-bit QDR II B2 SRAM
  • The K7R323682M,K7R321882M and K7R320982M are 37,748,736-bits QDR(Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7R323682M, 2,097,152 words by 18 bits for K7R321882M and 4,194,304 words by 9bits for ...
  • K7R320982M,TM 1Mx36-bit, 2Mx18-bit, 4Mx9-bit QDR II B2 SRAM
  • The K7R323682M,K7R321882M and K7R320982M are 37,748,736-bits QDR(Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7R323682M, 2,097,152 words by 18 bits for K7R321882M and 4,194,304 words by 9bits for ...
  • K7R323684C,36Mb QDRII SRAM Specification
  • The K7R323684C, K7R321884C and K7R320984C can be operated with the single clock pair K and K, instead of C or C for output clocks. To operate these devices in single clock mode, C and C must be tied high during power up and must be maintained high dur- ing ...
  • K7R321884C,36Mb QDRII SRAM Specification
  • The K7R323684C, K7R321884C and K7R320984C are 37,748,736-bits QDR (Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7R323684C and 2,097,152 words by 18 bits for K7R321884C and 4,194,304 words by 9 bits ...
  • K7R320984C,36Mb QDRII SRAM Specification
  • The K7R323684C, K7R321884C and K7R320984C are 37,748,736-bits QDR (Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7R323684C and 2,097,152 words by 18 bits for K7R321884C and 4,194,304 words by 9 bits ...
  • K7R323684M,TM 1Mx36-bit, 2Mx18-bit QDR II B4 SRAM
  • The K7R323684M and K7R321884M are37,748,736-bits QDR(Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7R323684M and 2,097,152 words by 18 bits for K7R321884M. ...
  • K7R321884M,TM 1Mx36-bit, 2Mx18-bit QDR II B4 SRAM
  • The K7R323684M and K7R321884M are37,748,736-bits QDR(Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7R323684M and 2,097,152 words by 18 bits for K7R321884M. ...
  • K7R163682B,18Mb QDRII SRAM Specification
  • The K7R163682B,K7R161882B and K7R160982B are 18,874,368-bits QDR (Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits for K7R163682B, 1,048,576 words by 18 bits for K7R161882B and 2,097,152 words by 9bits for ...
  • K7K3236T2C,36Mb DDRII+ SRAM Specification
  • The K7K3236T2C and K7K3218T2C are 37,748,736-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are orga- nized as 1,048,576 words by 36bits for K7K3236T2C and 2,097,152 words by 18 bits for K7K3218T2C . Address, data inputs, and all control ...
  • K7K3218T2C,36Mb DDRII+ SRAM Specification
  • The K7K3236T2C and K7K3218T2C are 37,748,736-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are orga- nized as 1,048,576 words by 36bits for K7K3236T2C and 2,097,152 words by 18 bits for K7K3218T2C . ...
  • K7I323682C,36Mb DDRII SRAM Specification
  • The K7I323682C and K7I321882C are 37,748,736-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7I323682C and 2,097,152 words by 18 bits for K7I321882C. Address, data inputs, and all control signals ...
  • K7I321882C,36Mb DDRII SRAM Specification
  • The K7I323682C and K7I321882C are 37,748,736-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7I323682C and 2,097,152 words by 18 bits for K7I321882C. Address, data inputs, and all control signals ...
  • K7I323684C,36Mb DDRII SRAM Specification
  • K7I323684C and K7I321884C can be operated with the single clock pair K and K, instead of C or C for output clocks. To operate these devices in single clock mode, C and C must be tied high during power up and must be maintained high during oper- ation. After ...
  • K7I321884C,36Mb DDRII SRAM Specification
  • The K7I323684C and K7I321884C are 37,748,736-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7I323684C and 2,097,152 words by 18 bits for K7I321884C. ...
  • K7I323682M,1Mx36-bit, 2Mx18-bit DDRII CIO B2 SRAM
  • The K7I323682M and K7I321882M are 37,748,736-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7I323682M and 2,097,152 words by 18 bits for K7I321882M . ...
  • K7I321882M,1Mx36-bit, 2Mx18-bit DDRII CIO B2 SRAM
  • The K7I323682M and K7I321882M are 37,748,736-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7I323682M and 2,097,152 words by 18 bits for K7I321882M . ...
  • K7I323684M,1Mx36-bit, 2Mx18-bit DDRII CIO B4 SRAM
  • The K7I323684M and K7I321884M are 37,748,736-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7I323684M and 2,097,152 words by 18 bits for K7I321884M. ...
  • K7I321884M,1Mx36-bit, 2Mx18-bit DDRII CIO B4 SRAM
  • The K7I323684M and K7I321884M are 37,748,736-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7I323684M and 2,097,152 words by 18 bits for K7I321884M. ...
  • K7J323682C,36Mb DDRII SRAM Specification
  • The K7J323682C and K7J321882C are 37,748,736-bits DDR Separate I/O Synchronous Pipelined Burst SRAMs. They are orga- nized as 1,048,576 words by 36bits for K7J323682C and 2,097,152 words by 18 bits for K7J321882C. The DDR SIO operation is possible by ...
  • K7J321882C,36Mb DDRII SRAM Specification
  • The K7J323682C and K7J321882C are 37,748,736-bits DDR Separate I/O Synchronous Pipelined Burst SRAMs. They are orga- nized as 1,048,576 words by 36bits for K7J323682C and 2,097,152 words by 18 bits for K7J321882C. The DDR SIO operation is possible by ...
  • K7J323682M,1Mx36-bit, 2Mx18-bit DDR II SIO B2 SRAM
  • The K7J323682M and K7J321882M are 37,748,736-bits DDR Separate I/O Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7J323682M and 2,097,152 words by 18 bits for K7J321882M. ...
  • K7J321882M,1Mx36-bit, 2Mx18-bit DDR II SIO B2 SRAM
  • The K7J323682M and K7J321882M are 37,748,736-bits DDR Separate I/O Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7J323682M and 2,097,152 words by 18 bits for K7J321882M. ...
  • K7D321874C,36Mb DDR SRAM Specification
  • The K7D323674C and K7D321874C are 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 1,048,576 words by 36 bits for K7D323674C and 2,097,152 words by 18 bits for K7D321874C, fabricated using Samsung\'s advanced CMOS ...
  • K7D323674A,32Mb A-die DDR SRAM Specification
  • The K7D323674A and K7D321874A are 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 1,048,576 words by 36 bits for K7D323674A and 2,097,152 words by 18 bits for K7D321874A, fabricated using Samsung\'s advanced CMOS ...
  • K7D321874A,32Mb A-die DDR SRAM Specification
  • The K7D323674A and K7D321874A are 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 1,048,576 words by 36 bits for K7D323674A and 2,097,152 words by 18 bits for K7D321874A, fabricated using Samsung\'s advanced CMOS ...
  • K7P323674C,36Mb Late Write SRAM Specification
  • The K7P323674C and K7P321874C are 37,748,736 bit Synchronous Pipeline Mode SRAM. It is organized as 1,048,576 words of 36 bits(or 2,097,152 words of 18 bits)and is implemented in SAMSUNGs advanced CMOS technology. Single differential HSTL level K clocks are ...
  • K7P321874C,36Mb Late Write SRAM Specification
  • The K7P323674C and K7P321874C are 37,748,736 bit Synchronous Pipeline Mode SRAM. It is organized as 1,048,576 words of 36 bits(or 2,097,152 words of 18 bits)and is implemented in SAMSUNGs advanced CMOS technology. Single differential HSTL level K clocks are ...
  • K7P323666M,32Mb M-die LW SRAM Specification
  • The K7P323666M and K7P321866M are 37,748,736 bit Synchronous Pipeline Mode SRAM. It is organized as 1,048,576 words of 36 bits(or 2,097,152 words of 18 bits)and is implemented in SAMSUNGs advanced CMOS technology. Single differential HSTL level K clocks are ...
  • K7A323630C,36Mb Sync. Pipelined Burst SRAM Specification
  • The K7A323630C and K7A321830C are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 1M(2M) words of 36(18) bits and inte- grates address and ...
  • K7B321835C,36Mb Sync. Burst SRAM Specification
  • The K7B323635C and K7B321835C are 37,748,736-bit Syn- chronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 1M(2M) words of 36(18) bits and integrates address and ...
  • K7B323635C,36Mb Sync. Burst SRAM Specification
  • The K7B323635C and K7B321835C are 37,748,736-bit Syn- chronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 1M(2M) words of 36(18) bits and integrates address and ...
  • K7B323625M,36Mb Sync. Burst SRAM Specification
  • The K7B323625M and K7B321825M are 37,748,736-bit Syn- chronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 1M(2M) words of 36(18) bits and integrates address and ...
  • K7A323600M,36Mb Sync. Pipelined Burst SRAM Specification
  • The K7A323600M and K7A321800M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 1M(2M) words of 36(18) bits and inte- grates address and ...
  • K7M323635C,1Mx36 & 2Mx18-Bit Flow Through NtRAM
  • The K7M323635C and K7M321835C are 37,748,736-bits Syn- chronous Static SRAMs. TM The NtRAM , or No Turnaround Random Access Memory uti- lizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except ...
  • K7M321835C,TM 36Mb NtRAM Specification
  • The K7M323635C and K7M321835C are 37,748,736-bits Syn- chronous Static SRAMs. TM The NtRAM , or No Turnaround Random Access Memory uti- lizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except ...
  • K7M323625M,1Mx36 & 2Mx18-Bit Flow Through NtRAM
  • The K7M323625M and K7M321825M are 37,748,736-bits Syn- chronous Static SRAMs. TM The NtRAM , or No Turnaround Random Access Memory uti- lizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except ...
  • K7M321825M,1Mx36 & 2Mx18-Bit Flow Through NtRAM
  • The K7M323625M and K7M321825M are 37,748,736-bits Syn- chronous Static SRAMs. TM The NtRAM , or No Turnaround Random Access Memory uti- lizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except ...
  • K7N323631C,1Mx36 & 2Mx18-Bit Pipelined NtRAM
  • The K7N323631C and K7N321831C are 37,748,736-bits Synchronous Static SRAMs. TM The NtRAM , or No Turnaround Random Access Memory uti- lizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except ...
  • K7N321831C,1Mx36 & 2Mx18-Bit Pipelined NtRAM
  • The K7N323631C and K7N321831C are 37,748,736-bits Synchronous Static SRAMs. TM The NtRAM , or No Turnaround Random Access Memory uti- lizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except ...
  • K7N323645M,1Mx36 & 2Mx18-Bit Pipelined NtRAM
  • The K7N323645M and K7N321845M are 37,748,736-bits Syn- chronous Static SRAMs. TM The NtRAM , or No Turnaround Random Access Memory uti- lizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except ...
  • K7N321845M,1Mx36 & 2Mx18-Bit Pipelined NtRAM
  • The K7N323645M and K7N321845M are 37,748,736-bits Syn- chronous Static SRAMs. TM The NtRAM , or No Turnaround Random Access Memory uti- lizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except ...
  • K7N323601M,1Mx36 & 2Mx18-Bit Pipelined NtRAM
  • The K7N323601M and K7N321801M are 37,748,736-bits Synchronous Static SRAMs. TM The NtRAM , or No Turnaround Random Access Memory uti- lizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except ...
  • K7N321801M,1Mx36 & 2Mx18-Bit Pipelined NtRAM
  • The K7N323601M and K7N321801M are 37,748,736-bits Synchronous Static SRAMs. TM The NtRAM , or No Turnaround Random Access Memory uti- lizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except ...
  • UPD44321181,TM 32M-BIT ZEROSB SRAM FLOW THROUGH OPERATION
  • The UPD44321181 is a 2,097,152-word by 18-bit and the UPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The UPD44321181 and UPD44321361 are optimized to ...
  • UPD44321182,TM 32M-BIT ZEROSB SRAM PIPELINED OPERATION
  • The UPD44321182 is a 2,097,152-word by 18-bit and the UPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The UPD44321182 and UPD44321362 are optimized to ...
  • IS61QDB41M36,QUAD (Burst Of 4) Synchronous SRAMs
  • The 36Mb IS61QDB41M36 and IS61QDB42M18 are synchronous, high-perfor- mance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the ...
  • A67L0636,2M X 16, 1M X 36 LVTTL, Pipelined ZeBLTM SRAM
  • The A67L1618, A67L0636 SRAMs integrate a 2M X 18, 1M X 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. These SRAMs are optimized for 100 percent bus utilization without the insertion of any wait cycles during ...
  • A67X0636A,2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAM
  • The A67X1618A, A67X0636A SRAMs integrate a 2M X 18, 1M X 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. These SRAMs are optimized for 100 percent bus utilization without the insertion of any wait cycles during ...
  • A67L06361,2M X 18, 1M X 36 LVTTL, Flow-through ZeBLTM SRAM
  • The A67L16181, A67L06361 SRAMs integrate a 2M X 18, 1M X 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. These SRAMs are optimized for 100 percent bus utilization without the insertion of any wait cycles during ...
  • A67L16181,2M X 18, 1M X 36 LVTTL, Flow-through ZeBLTM SRAM
  • The A67L16181, A67L06361 SRAMs integrate a 2M X 18, 1M X 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. These SRAMs are optimized for 100 percent bus utilization without the insertion of any wait cycles during ...
  • A67P0636,2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRA
  • The A67P1618, A67P0636 SRAMs integrate a 2M X 18, 1M X 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. These SRAMs are optimized for 100 percent bus utilization without the insertion of any wait cycles during ...
  • A67X1618A,2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  • The A67X1618A, A67X0636A SRAMs integrate a 2M X 18, 1M X 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. These SRAMs are optimized for 100 percent bus utilization without the insertion of any wait cycles during ...
  • A67P06361,2M X 18, 1M X 36 LVTTL, Flow-through ZeBLTM SRAM
  • The A67P16181, A67P06361 SRAMs integrate a 2M X 18, 1M X 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. These SRAMs are optimized for 100 percent bus utilization without the insertion of any wait cycles during ...