6.2 Amps,600/650 Volts N-channel Mosfet

The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low Gate charge, low on-state resistance and have a high rugged avalanche characteristics. This Power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. By LianShun Electronics Co., Ltd
Part Manufacturer Description Datasheet Samples
SGP6N60UFDTU Rochester Electronics LLC Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
SGS6N60UFDTU Rochester Electronics LLC Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN
SGW6N60UFDTM Rochester Electronics LLC Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3
6N60 's Packages6N60 's pdf datasheet
6N60-A-TA3-T
6N60L-A-TA3-T
6N60-A-TF3-T
6N60L-A-TF3-T
6N60-B-TB3-T
6N60L-B-TB3-T
6N60-B-TF3-T
6N60L-B-TF3-T




6N60 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
6N60 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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