Light Emitting Diode

7344-G2T3-AQTB Light Emitting Diode By Everlight Electronics Co., Ltd.
Part Manufacturer Description Datasheet Samples
ISL73444SEHF/PROTO Renesas Electronics Corporation
  • Electrically screened to DLA SMD# 5962-13214
  • Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
  • <5µs recovery from SEE (LETTH = 86.4MeV•cm2/mg)
  • Unity gain stable
  • Rail-to-rail input and output
  • Wide gain·bandwidth product: 19MHz
  • Wide single and dual supply range: 2.7V to 40V max
  • Low input offset voltage: 400µV
  • Low current consumption (per amplifier): 1.1mA, typ
  • No phase reversal with input overdrive
  • Slew rate
    • Large signal: 60V/µs
  • Operating temperature range: -55°C to +125°C
  • Radiation acceptance (see TID report)
    • Low dose rate (0.01rad(Si)/s): 50krad(Si)
  • SEE hardness (see SEE report for details)
    • SEB LETTH (VS = ±21V): 86.4MeV•cm2/mg
    • SEL immune (SOI Process)
  •  

     

    APPLICATIONS

  • Precision instruments
  • Active filter blocks
  • Data acquisition
  • Power supply control
  • Process control
  • ISL73444SEHVX Renesas Electronics Corporation
  • Electrically screened to DLA SMD# 5962-13214
  • Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
  • <5µs recovery from SEE (LETTH = 86.4MeV•cm2/mg)
  • Unity gain stable
  • Rail-to-rail input and output
  • Wide gain·bandwidth product: 19MHz
  • Wide single and dual supply range: 2.7V to 40V max
  • Low input offset voltage: 400µV
  • Low current consumption (per amplifier): 1.1mA, typ
  • No phase reversal with input overdrive
  • Slew rate
    • Large signal: 60V/µs
  • Operating temperature range: -55°C to +125°C
  • Radiation acceptance (see TID report)
    • Low dose rate (0.01rad(Si)/s): 50krad(Si)
  • SEE hardness (see SEE report for details)
    • SEB LETTH (VS = ±21V): 86.4MeV•cm2/mg
    • SEL immune (SOI Process)
  •  

     

    APPLICATIONS

  • Precision instruments
  • Active filter blocks
  • Data acquisition
  • Power supply control
  • Process control
  • ISL73444SEHVF Renesas Electronics Corporation
  • Electrically screened to DLA SMD# 5962-13214
  • Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
  • <5µs recovery from SEE (LETTH = 86.4MeV•cm2/mg)
  • Unity gain stable
  • Rail-to-rail input and output
  • Wide gain·bandwidth product: 19MHz
  • Wide single and dual supply range: 2.7V to 40V max
  • Low input offset voltage: 400µV
  • Low current consumption (per amplifier): 1.1mA, typ
  • No phase reversal with input overdrive
  • Slew rate
    • Large signal: 60V/µs
  • Operating temperature range: -55°C to +125°C
  • Radiation acceptance (see TID report)
    • Low dose rate (0.01rad(Si)/s): 50krad(Si)
  • SEE hardness (see SEE report for details)
    • SEB LETTH (VS = ±21V): 86.4MeV•cm2/mg
    • SEL immune (SOI Process)
  •  

     

    APPLICATIONS

  • Precision instruments
  • Active filter blocks
  • Data acquisition
  • Power supply control
  • Process control
  • 7344-G2T3-AQTB 's Packages7344-G2T3-AQTB 's pdf datasheet



    7344-G2T3-AQTB Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
    7344-G2T3-AQTB circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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