Oscilent Corporation RF SAW Filter

Oscilent Corporation RF SAW Filter 813-SL70.0M-5B By Oscilent Corporation
Part Manufacturer Description Datasheet Samples
ISL705BRHVF Renesas Electronics Corporation $ Electrically screened to SMD 5962-11213 $ QML qualified per MIL-PRF-38535 requirements $ Radiation hardness $$ High dose rate (EH and RH): 100krad(Si) $$ Low dose rate (EH only): 100krad(Si) (*) $$ SEL/SEB LETTH: 86MeV•cm2/mg

*Product capability established by initial characterization. The EH version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate.
$ Precision supply voltage monitor $$ 4.65V threshold in the ISL705AxH/BxH/CxH $$ 3.08V threshold in the ISL706AxH/BxH/CxH $ 200ms (typical) reset pulse width $$ Active high, active low, and open-drain options $ Independent watchdog timer with 1.6s (typical) timeout $ Precision threshold detector $$ 1.25V threshold in the ISL705AxH/BxH/CxH $$ 0.6V threshold in the ISL706AxH/BxH/CxH $ Debounced TTL/CMOS compatible manual-reset input $ Reset output valid at VDD = 1.2V
ISL705ARHF/PROTO Renesas Electronics Corporation $ Electrically screened to SMD 5962-11213 $ QML qualified per MIL-PRF-38535 requirements $ Radiation hardness $$ High dose rate (EH and RH): 100krad(Si) $$ Low dose rate (EH only): 100krad(Si) (*) $$ SEL/SEB LETTH: 86MeV•cm2/mg

*Product capability established by initial characterization. The EH version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate.
$ Precision supply voltage monitor $$ 4.65V threshold in the ISL705AxH/BxH/CxH $$ 3.08V threshold in the ISL706AxH/BxH/CxH $ 200ms (typical) reset pulse width $$ Active high, active low, and open-drain options $ Independent watchdog timer with 1.6s (typical) timeout $ Precision threshold detector $$ 1.25V threshold in the ISL705AxH/BxH/CxH $$ 0.6V threshold in the ISL706AxH/BxH/CxH $ Debounced TTL/CMOS compatible manual-reset input $ Reset output valid at VDD = 1.2V
ISL70444SEHF/PROTO Renesas Electronics Corporation
  • Electrically screened to DLA SMD# 5962-13214
  • Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
  • <5µs recovery from SEE (LETTH = 86.4MeV•cm2/mg)
  • Unity gain stable
  • Rail-to-rail input and output
  • Wide gain·bandwidth product: 19MHz
  • Wide single and dual supply range: 2.7V to 40V max
  • Low input offset voltage: 400µV
  • Low current consumption (per amplifier): 1.1mA, typ
  • No phase reversal with input overdrive
  • Slew rate
    • Large signal: 60V/µs
  • Operating temperature range: -55°C to +125°C
  • Radiation acceptance (see TID report)
    • High dose rate (50-300rad(Si)/s): 300krad(Si) (ISL70444SEH only)
    • Low dose rate (0.01rad(Si)/s): 50krad(Si)
  • SEE hardness (see SEE report for details)
    • SEB LETTH (VS = ±21V): 86.4MeV•cm2/mg
    • SEL immune (SOI Process)
  •  

     

    APPLICATIONS

  • Precision instruments
  • Active filter blocks
  • Data acquisition
  • Power supply control
  • Process control
  • ISL70219ASEHVX Renesas Electronics Corporation $ Electrically screened to DLA SMD# https://landandmaritimeapps.dla.mil/Downloads/MilSpec/Smd/14226.pdf>5962-14226 $ Low input offset voltage: ±110μV, maximum $ Superb offset temperature coefficient: 1μV/°C, maximum $ Input bias current: ±15nA, maximum $ Input bias current TC: ±5pA/°C, maximum $ Low current consumption: 440μA $ Voltage noise: 8nV/√Hz $ Wide supply range: 4.5V to 36V $ Operating temperature range: -55°C to +125°C $ Radiation environment $$ SEB LETTH (VS = ±18V): 86.4MeV•cm2/mg $$ SET recovery time: ≤10μs at 60MeV•cm2/m $$ SEL immune (SOI process) $$ Total dose HDR (50 to 300rad(Si)/s): 300krad(Si) $$ Total dose LDR (10mrad(Si)/s): 100krad(Si)*

    * Product capability established by initial characterization. The EH version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate.
    ISL70321SEHVF Renesas Electronics Corporation $ Wide operating voltage range, 3V to 13.2V $ Single resistor sets the rising and falling delay $ Power-off POLs in reverse order or simultaneously $ Precision voltage monitoring $$ 600mV ±1.5% threshold voltage over temperature and radiation $ Full military temperature range operation $$ TA = -55°C to +125°C $$ TJ = -55°C to +150°C $ Radiation Hardness $$ High Dose Rate (HDR) (50-300rad(Si)/s): 100krad(Si) - ISL70321SEH only $$ Low Lose Rate (LDR) (0.01rad(Si)/s): 75krad(Si) ISL70321SEH and ISL73321SEH $ SEE Hardness (Review SEE Report for details) $$ No SEB/SEL LETTH, VDD = 14.7V: 86MeV•cm2/mg $$ SET, SEFI free at LET 20MeV•cm2/mg $ Electrically screened to DLA SMD 5962-17225
    ISL70218SEHVF Renesas Electronics Corporation $ DLA SMD# https://landandmaritimeapps.dla.mil/Downloads/MilSpec/Smd/12222.pdf>5962-12222 $ Wide single and dual supply range: 3V to 42V, Abs. Max. $ Low current consumption: 850µA, typical $ Low input offset voltage: 40µV, typical $ Rail-to-rail output: <10mV $ Rail-to-rail input differential voltage range for comparator applications $ Operating temperature range: -55°C to +125°C $ Below-ground (V-) input capability to -0.5V $ Low noise voltage: 5.6nV/√Hz, typical $ Low noise current: 355fA/√Hz, typical $ Offset voltage temperature drift: 0.3µV/°C, typical $ No phase reversal $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 100krad(Si)* $$ SEB LETTH (VS = ±18V): 86.4 MeV•cm2/mg $$ SEL Immune (SOI Process)

    * Product capability established by initial characterization. The EH version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate.
    ISL70001SEHVFE Renesas Electronics Corporation $ ±1% reference voltage over line, load, temperature and radiation $ Current mode control for excellent dynamic response $ Full Mil-temp range operation (TA = -55°C to +125°C) $ High efficiency >90% $ Fixed 1MHz operating frequency $ Available in a thermally enhanced heatsink package - R48.B $ Operates from 3V to 5.5V supply $ Adjustable output voltage $$ Two external resistors set VOUT from 0.8V to ~85% of VIN $ Bidirectional SYNC pin allows two devices to be synchronized 180° out-of-phase $ Starts into prebiased load $ Power-good output voltage monitor $ Adjustable analog soft-start $ Input undervoltage, output undervoltage and output overcurrent protection $ Electrically screened to DLA SMD 5962-09225 $ QML qualified per MIL-PRF-38535 requirements $ EH version is wafer-by-wafer acceptance tested for ELDRS $ Radiation hardness $$ Total dose [50-300rad(Si)/s]: 100krad(Si) (min) $$ Total dose [<10mrad(Si)/s]: 50krad(Si) (min) $ SEE hardness $$ SEL and SEB LETeff: 86.4MeV/mg/cm2 (min) $$ SEFI X-section (LETeff = 86.4MeV/mg/cm2) 1.4 x 10-6 cm2 (max) $$ SET LETeff (<1 pulse perturbation) 86.4MeV/mg/cm2 (min)
    ISL70024SEHL/PROTO Renesas Electronics Corporation
  • Very low rDS(ON) 45mΩ (typical)
  • Ultra low total gate charge 2.5nC (typical)
  • SEE hardness (see SEE report for details)
    • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg
  • Radiation acceptance (see TID report)
    • High dose rate (50-300rad(Si)/s): 100krad(Si)
    • Low dose rate (0.01rad(Si)/s) : 75krad(Si)
  • Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package
    • Package area: 42mm2
  • Full military-temperature range operation
    • TA = -55°C to +125°C
    • TJ = -55°C to +150°C
  •  

     

    APPLICATIONS

  • Switching regulation
  • Motor drives
  • Relay drives
  • Inrush protection
  • Down hole drilling
  • High reliability industrial
  • ISL70244SEHEV1Z Renesas Electronics Corporation 19MHz Rad Hard 40V Dual RRIO, Low-Power Op Amp Evaluation Board
    ISL706BRHQF Renesas Electronics Corporation $ Electrically screened to SMD 5962-11213 $ QML qualified per MIL-PRF-38535 requirements $ Radiation hardness $$ High dose rate (EH and RH): 100krad(Si) $$ Low dose rate (EH only): 100krad(Si) (*) $$ SEL/SEB LETTH: 86MeV•cm2/mg

    *Product capability established by initial characterization. The EH version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate.
    $ Precision supply voltage monitor $$ 4.65V threshold in the ISL705AxH/BxH/CxH $$ 3.08V threshold in the ISL706AxH/BxH/CxH $ 200ms (typical) reset pulse width $$ Active high, active low, and open-drain options $ Independent watchdog timer with 1.6s (typical) timeout $ Precision threshold detector $$ 1.25V threshold in the ISL705AxH/BxH/CxH $$ 0.6V threshold in the ISL706AxH/BxH/CxH $ Debounced TTL/CMOS compatible manual-reset input $ Reset output valid at VDD = 1.2V
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