The M36LLR8760T1, M36LLR8760D1,
M36LLR8760M1 and M36LLR8760B1 combine
three memory devices in a Multi-Chip Package:
,a 256-Mbit, Multiple Bank Flash memory, the
M30L0R8000(T/B)0 (Flash 1)
,a 128-Mbit, Multiple Bank Flash memory, the
M58LR128GT/B (Flash ...
The M36P0R9060E0 combines two memory devices in a Multi-Chip Package:
512-Mbit Multiple Bank Flash memory (the M58PR512J)
64-Mbit PSRAM (the M69KB096AM) ...
The M69KB096AA is a 64 Mbit (67,108,864 bit)
PSRAM, organized as 4,194,304 words by 16 bits.
The memory array is implemented using a one
transistor-per-cell topology, to achieve bigger ar-
ray sizes. ...
The M69KM096AA is a 64 Mbit (67,108,864 bit) PSRAM, organized as 4,194,304 Words by
16 bits. It uses a high-speed CMOS DRAM technology implemented using a one transistor-
per-cell topology that achieves bigger array sizes. It provides a high-density ...
The CY7C1511JV18, CY7C1526JV18, CY7C1513JV18, and
CY7C1515JV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR-II architecture. QDR-II architecture consists
of two separate ports: the read port and the write port to access
the memory array. The ...
The CY7C1566V18, CY7C1577V18, CY7C1568V18, and
CY7C1570V18 are 1.8V Synchronous Pipelined SRAMs
equipped with DDR-II+ architecture. The DDR-II+ consists of an
SRAM core with advanced synchronous peripheral circuitry.
Addresses for read and write are ...
The CY7C1561V18, CY7C1576V18, CY7C1563V18, and
CY7C1565V18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR-II+ architecture. Similar to QDR-II archi-
tecture, QDR-II+ SRAMs consists of two separate ports: the read
port and the write port to access ...
The CY7C1541V18, CY7C1556V18, CY7C1543V18, and
CY7C1545V18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR-II+ architecture. Similar to QDR-II archi-
tecture, QDR-II+ SRAMs consists of two separate ports: the read
port and the write port to access ...
The CY7C1546V18, CY7C1557V18, CY7C1548V18, and
CY7C1550V18 are 1.8V Synchronous Pipelined SRAM
equipped with DDR-II+ architecture. The DDR-II+ consists of an
SRAM core with advanced synchronous peripheral circuitry.
Addresses for read and write are latched ...
The CY7C1522AV18, CY7C1529AV18, CY7C1523AV18, and
CY7C1524AV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with Double Data Rate Separate IO (DDR-II SIO)
architecture. The DDR-II SIO consists of two separate ports: the
read port and the write port to ...
The CY7C1511AV18, CY7C1526AV18, CY7C1513AV18, and
CY7C1515AV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR,-II architecture. QDR-II architecture
consists of two separate ports: the read port and the write port to
access the memory array. The ...
The CY7C1510AV18, CY7C1525AV18, CY7C1512AV18, and
CY7C1514AV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR,-II architecture. QDR-II architecture
consists of two separate ports: the read port and the write port to
access the memory array. The ...
The CY7C1516AV18, CY7C1527AV18, CY7C1518AV18, and
CY7C1520AV18 are 1.8V Synchronous Pipelined SRAM
equipped with DDR-II architecture. The DDR-II consists of an
SRAM core with advanced synchronous peripheral circuitry and
a 1-bit burst counter. Addresses ...
The CY7C1471V25, CY7C1473V25, and CY7C1475V25 are
2.5V, 2M x 36/4M x 18/1M x 72 synchronous flow through burst
SRAMs designed specifically to support unlimited true
back-to-back read or write operations without the insertion of
wait states. The ...
The CY7C1471V33, CY7C1473V33 and CY7C1475V33 are
3.3V, 2M x 36/4M x 18/1M x 72 synchronous flow through burst
SRAMs designed specifically to support unlimited true
back-to-back read or write operations without the insertion of
wait states. The CY7C1471V33, ...
The CY7C1481V25/CY7C1483V25/CY7C1487V25 is a 2.5V,
2M x 36/4M x 18/1M x 72 Synchronous Flow-through SRAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A ...
The CY7C1484V33/CY7C1485V33 SRAM integrates 2M x
36/4M x 18 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered ...
The CY7C1484V25/CY7C1485V25 SRAM integrates 2M x
36/4M x 18 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered ...
The CY7C1484V33/CY7C1485V33 SRAM integrates 2M x
36/4M x 18 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered ...
The CY7C1481V33/CY7C1483V33/CY7C1487V33 is a 3.3V,
2M x 36/4M x 18/1M x 72 Synchronous Flow-through SRAM
designed to interface with high speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133 MHz version). A ...
The CY7C1481V25/CY7C1483V25/CY7C1487V25 is a 2.5V,
2M x 36/4M x 18/1M x 72 Synchronous Flow-through SRAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A ...
The CY7C1480V33/CY7C1482V33/CY7C1486V33 SRAM
integrates 2M x 36/4M x 18/1M 72 SRAM cells wit
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a ...
The CY7C1480V25/CY7C1482V25/CY7C1486V25 SRAM
integrates 2M x 36/4M x 18/1M 72 SRAM cells wit
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a ...
The CY7C1470V25/CY7C1472V25/CY7C1474V25 are 2.5V,
2M x 36/4M x 18/1M x 72 Synchronous pipelined burst SRAMs
with No Bus Latency, (NoBL,) logic, respectively. They are
designed to support unlimited true back-to-back Read/Write
operations with no wait ...
The CY7C1470V33, CY7C1472V33, and CY7C1474V33 are
3.3V, 2M x 36/4M x 18/1M x 72 Synchronous pipelined burst
SRAMs with No Bus Latency, (NoBL,) logic, respectively.
They are designed to support unlimited true back-to-back
Read/Write operations with no wait ...
The CY7C1470V25/CY7C1472V25/CY7C1474V25 are 2.5V,
2M x 36/4M x 18/1M x 72 Synchronous pipelined burst SRAMs
with No Bus Latency, (NoBL,) logic, respectively. They are
designed to support unlimited true back-to-back Read/Write
operations with no wait ...
The CY7C1516V18, CY7C1527V18, CY7C1518V18, and
CY7C1520V18 are 1.8V Synchronous Pipelined SRAM
equipped with DDR-II architecture. The DDR-II consists of an
SRAM core with advanced synchronous peripheral circuitry
and a 1-bit burst counter. Addresses for ...
The CY7C1511V18, CY7C1526V18, CY7C1513V18, and
CY7C1515V18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR-II architecture. QDR-II architecture
consists of two separate ports to access the memory array.
The Read port has dedicated Data Outputs to ...
The CY7C1510V18, CY7C1525V18, CY7C1512V18, and
CY7C1514V18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR-II architecture. QDR-II architecture
consists of two separate ports to access the memory array.
The Read port has dedicated Data Outputs to ...
The CY7C1484V25/CY7C1485V25 SRAM integrates 2M x
36/4M x 18 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered ...
The world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to
handle the multi-media data. SAMSUNGs UtRAM products are desgned to meet all the request from the various customers who
want to cope ...
The world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to
handle the multi-media data. SAMSUNGs UtRAM products are desgned to meet all the request from the various customers who
want to cope ...
The world is moving into the mobile multi-media era and there-
fore the mobile handsets need much bigger memory capacity to
handle the multi-media data.
SAMSUNGs UtRAM products are designed to meet all th
request from the various customers who want to ...
The K7R643682M,K7R641882M and K7R640982M are 75,497,472-bits QDR (Quad Data Rate)
Synchronous Pipelined Burst SRAMs.
They are organized as 2,097,152 words by 36bits for K7R643682M, 4,194,304 words by 18 bits for K7R641882M and
8,388,608 words by 9bits for ...
The K7R643682M,K7R641882M and K7R640982M are 75,497,472-bits QDR (Quad Data Rate)
Synchronous Pipelined Burst SRAMs.
They are organized as 2,097,152 words by 36bits for K7R643682M, 4,194,304 words by 18 bits for K7R641882M and
8,388,608 words by 9bits for ...
The K7R643682M,K7R641882M and K7R640982M are 75,497,472-bits QDR (Quad Data Rate)
Synchronous Pipelined Burst SRAMs.
They are organized as 2,097,152 words by 36bits for K7R643682M, 4,194,304 words by 18 bits for K7R641882M and
8,388,608 words by 9bits for ...
The K7R643684M and K7R641884M are 75,497,472-bits QDR(Quad Data Rate) Synchronous Pipelined Burst SRAMs.
They are organized as 2,097,152 words by 36bits for K7R643684M and 4,194,304 words by 18 bits for K7R641884M.
The QDR operation is possible by supporting ...
The K7R643684M and K7R641884M are 75,497,472-bits QDR(Quad Data Rate) Synchronous Pipelined Burst SRAMs.
They are organized as 2,097,152 words by 36bits for K7R643684M and 4,194,304 words by 18 bits for K7R641884M.
The QDR operation is possible by supporting ...
The K7I643682M and K7I641882M are 75,497,472-bits DDR Common I/O Synchronous Pipelined Burst SRAMs.
They are organized as 2,097,152 words by 36bits for K7I643682M and 4,194,304 words by 18 bits for K7I641882M.
Address, data inputs, and all control signals ...
The K7I643682M and K7I641882M are 75,497,472-bits DDR Common I/O Synchronous Pipelined Burst SRAMs.
They are organized as 2,097,152 words by 36bits for K7I643682M and 4,194,304 words by 18 bits for K7I641882M.
Address, data inputs, and all control signals ...
The K7I643684M and K7I641884M are 75,497,472-bits DDR Common I/O Synchronous Pipelined Burst SRAMs.
They are organized as 2,097,152 words by 36bits for K7I643684M and 4,194,304 words by 18 bits for K7I641884M.
Address, data inputs, and all control signals ...
The K7I643684M and K7I641884M are 75,497,472-bits DDR Common I/O Synchronous Pipelined Burst SRAMs.
They are organized as 2,097,152 words by 36bits for K7I643684M and 4,194,304 words by 18 bits for K7I641884M. ...
The K7J643682M and K7J641882M are 75,497,472-bits DDR Separate I/O Synchronous Pipelined Burst SRAMs.
They are organized as 2,097,152 words by 36bits for K7J643682M and 4,194,304 words by 18 bits for K7J641882M.
The DDR SIO operation is possible by ...
The K7J643682M and K7J641882M are 75,497,472-bits DDR Separate I/O Synchronous Pipelined Burst SRAMs.
They are organized as 2,097,152 words by 36bits for K7J643682M and 4,194,304 words by 18 bits for K7J641882M. ...
The K7N643645M and K7N641845M are 75,497,472-bits Syn-
chronous Static SRAMs.
TM
The NtRAM , or No Turnaround Random Access Memory uti-
lizes all the bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except ...
The K7N643645M and K7N641845M are 75,497,472-bits Syn-
chronous Static SRAMs.
TM
The NtRAM , or No Turnaround Random Access Memory uti-
lizes all the bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except ...
The 72Mb IS61QDB22M36 and
IS61QDB24M18 are synchronous, high-perfor-
mance CMOS static random access memory
(SRAM) devices. These SRAMs have separate I/Os,
eliminating the need for high-speed bus turnaround.
i
The rising edge of K clock initiates the ...
The 72Mb IS61DDB42M36 and IS61DDB44M18
are synchronous, high-performance CMOS static
random access memory (SRAM) devices. These
SRAMs have a common I/O bus. The rising edge of
K clock initiates the read/write operation, and all
internal operations are ...
The 72Mb IS61DDB22M36 and
IS61DDB24M18 are synchronous, high-perfor-
mance CMOS static random access memory
(SRAM) devices. These SRAMs have a common I/O
bus. The rising edge of K clock initiates the
read/write operation, and all internal operations ...
The M36P0R9060E0 combines two memory devices in a Multi-Chip Package:
512-Mbit Multiple Bank Flash memory (the M58PR512J)
64-Mbit PSRAM (the M69KB096AM)
The purpose of this document is to describe how the two memory components operate with
respect to ...