The M29DW641F is a 64 Mbit (4Mb x16) non-volatile memory that can be read, erased and
reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V)
supply. On power-up the memory default to its Read mode. The M29DW641F has one ...
The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read,
erased and reprogrammed. These operations can be performed using a single low voltage
(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. M29W640FT has ...
The M29W640G is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read,
erased and reprogrammed. These operations can be performed using a single low voltage
(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The M29W640GH ...
The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb
x16) non-volatile memory that can be read, erased
and reprogrammed. These operations can be per-
formed using a single low voltage (2.7V to 3.6V)
core supply. ...
The M28W320FST, M28W320FSB, and M28W320FSU are 32 Mbit (2 Mbit 16) Secure
Flash memories; while the M28W640FST, M28W640FSB, and M28W640FSU are 64 Mbit
(4 Mbit 16). In the pesent datasheet, the M28W320FST and M28W320FSB will be
referred to as M28W320FS, ...
M58LW064C is a 64 Mbit (4Mb x16) non-volatile
memory that can be read, erased and repro-
grammed. These operations can be performed us-
ing a single low voltage (2.7V to 3.6V) core supply.
On power-up the memory defaults to Read mode
with an asynchronous ...
The M58WR016KU M58WR016KL , M58WR032KU
M58WR032KL and M58WR064KU M58WR064KL are 16-Mbit (1 Mbit 16), 32-
Mbit (2 Mbit 16) and 64-Mbit (4 Mbit 16) non-volatile Flash memories, respectively. In th
rest of the document, they will be referred to as ...
The M58WR064E is a 64 Mbit (4Mbit x16) non-vol
atile Flash memory that may be erased electrically
at block level and programmed in-system on a
Word-by-Word basis using a 1.65V to 2.2V VDD
supply for the circuitry and a 1.65V to 3.3V VDDQ
supply for the ...
The M58WR064HT and M58WR064HB are 64 Mbit (4 Mbit x16) non-volatile Flash
memories, and are collectively referred to in this document as the M58WR064HT/B. It can
be erased electrically at block level and programmed in-system on a word-by-word basis
using ...
The M58WR064FT
M58WR064FB is a 64 Mbit (4Mbit x16) non-
volatile Flash memory that may be erased electri-
cally at block level and programmed in-system on
a Word-by-Word basis using a 1.7V to 2V VDD
supply for the circuitry and a 1.7V to 2.24V ...
The M36W0R6030T0 and M36W0R6030B0 com-
bine two memory devices in a Multi-Chip Package:
a 64-Mbit, Multiple Bank Flash memory, the
M58WR064FT/B, and an 8-Mbit SRAM. Recom-
mended operating conditions do not allow more
than one memory to be active at the ...
The M28W640FCT and M28W640FCB are 64 Mbit (4 Mbit x 16) non-volatile Flash
memories that can be erased electrically at block level and programmed in-system on a
Word-by-Word basis using a 2.7V to 3.6V V supply for the circuitry and a 1.65V to 3.6V
DD
V ...
64M bit, 2.7-Volt Dual-Interface Flash with two 1056-Byte SRAM The AT45DB642D is a 2.7-volt, dual-interface sequential access Flash memory ideally suited for
a wide variety of digital voice-, image-, program code- and data-storage applications. ...
The AT45DCB008D, AT45DCB004D and AT45DCB002D are 2.7-volt only SPI com-
,
patible serial interface DataFlash Cards. They are offered in 8-megabyte (64-Mbit),
4-megabyte (32-Mbit) and 2-megabyte (16-Mbit), densities. These 7-pin cards are
form factor ...
The AT25DF641 is a serial interface Flash memory device designed for use in a wide
variety of high-volume consumer based applications in which program code is shad-
owed from Flash memory into embedded or external RAM for execution. The flexible
erase ...
The AT49BV6416
AT49BV6416T
is a 2.7-volt 64-megabit Flash memory. The memory is divided
into multiple sectors and planes for erase operations. The device can be read or
reprogrammed off a single 2.7V power supply, making it ideally suited for ...
The AT49SN6416
AT49SN6416T is a 1.8-volt 64-megabit Flash memory. The memory is divided
into multiple sectors and planes for erase operations. The device can be read or
reprogrammed off a single 1.8V power supply, making it ideally suited for ...
The AT49BV6416C
AT49BV6416CT
is a 2.7-volt 64-megabit Flash memory. The memory is divided
into multiple sectors and planes for erase operations. The device can be read or
reprogrammed off a single 2.7V power supply, making it ideally suited for ...
The AT49BV642D
AT49BV642DT is a 2.7-volt 64-megabit Flash memory organized as 4,194,304
words of 16 bits each. The memory is divided into 135 sectors for erase operations.
The device can be read or reprogrammed off a single 2.7V power supply, making it ...
The AT49BV642D
AT49BV642DT is a 2.7-volt 64-megabit Flash memory organized as 4,194,304
words of 16 bits each. The memory is divided into 135 sectors for erase operations.
The device can be read or reprogrammed off a single 2.7V power supply, making it ...
The AT49BV640D
AT49BV640DT is a 2.7-volt 64-megabit Flash memory organized as 4,194,304
words of 16 bits each. The memory is divided into 135 sectors for erase operations.
The device is offered in a 48-ball CBGA package. The device has CE and OE ...
The MX25L6405 is a CMOS 67,108,864 bit serial
TM
eLiteFlash Memory, which is configured as 8,388,608 x
8 internally. The MX25L6405 features a serial peripheral
interface and software protocol allowing operation on a
simple 3- wire bus. The three bus ...
The S29GL-N family of devices are 3.0-Volt single-power Flash memory manufactured using 110 nm
MirrorBit technology. The S29GL064N is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes.
Depending on the
model number, the devices have an 8-bit ...
The Spansion S29GL01GP, S29GL512P, S29GL256P, S29GL128P are Mirrorbit Flash Products fabricated on 90 nm process technology. These devices offer a fast page access time of 25ns with a corresponding random access time of 110ns. They feature a Writer Buffer ...
The S25FL064A device is a 3.0 Volt (2.7 V to 3.6 V) single power supply, serial interface Flash memory device. S25FL064A consists of 128 sectors, each with 512 Kb memory. ...
The M29DW640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read,
erased and reprogrammed. These operations can be performed using a single low voltage
(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. ...
The M29DW641F is a 64 Mbit (4Mb x16) non-volatile memory that can be read, erased and
reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V)
supply. On power-up the memory default to its Read mode. ...
The M36W0R6050T1 and M36W0R6050B1 combine two memories in a Multi-Chip
Package:
a 64-Mbit, Multiple Bank Flash memory, the M58WR064HT/B, and
a 32-Mbit Pseudo SRAM, the M69KB048BD.
The purpose of this document is to describe how the two memory components ...
The M36D0R6040T0 and M36D0R6040B0 com-
bine two memory devices in a Multi-Chip Package:
a 64-Mbit, Multiple Bank Flash memory, the
M58WR064FT/B, and a 16-Mbit Pseudo SRAM,
the M69AR024B. Recommended operating condi-
tions do not allow more than one memory ...
The S29GL-A family of devices are 3.0 V single power Flash memory manufac-
tured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device
organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb
device organized as 2,097,152 ...
The MX29LV640BU is a 64-mega bit Flash memory or-
ganized as 4M bytes of 16 bits. MXIC\'s Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX29LV640BU is
packaged in 48-pin TSOP and 63-ball CSP. ...
The MX28F640C3BT/MX28F640C3BB is a 64-mega bit Flash memory
organized as 4M words of 16 bits. The 1M word of data
is arranged in eight 4Kword boot and parameter sectors,
and 127 32Kword main sector which are individually
erasable. MXIC\'s Flash ...
