Rad-Hard Quad 2-Input NAND Gate With Open Drain |
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| Part | Manufacturer | Description | Datasheet | Samples | |
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| ACS03DMSR | Renesas Electronics Corporation | $ Devices QML Qualified in Accordance with MIL-PRF-38535 $ Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Intersil's QM Plan $ 1.25 Micron Radiation Hardened SOS CMOS $ Total Dose >300K RAD (Si) $ Single Event Upset (SEU) Immunity: <1 x 10-10 Errors/Bit/Day (Typ) $ SEU LET Threshold >100 MEV-cm2/mg $ Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse $ Dose Rate Survivability >1012 RAD (Si)/s, 20ns Pulse $ Latch-Up Free Under Any Conditions $ Military Temperature Range -55oC to +125oC $ Significant Power Reduction Compared to ALSTTL Logic $ DC Operating Voltage Range 4.5V to 5.5V $ Input Logic Levels $$ VIL = 30% of VCC Max $$ VIH = 70% of VCC Min $ Input Current ≤ 1µA at VOL, VOH $ Fast Propagation Delay 15ns (Max), 10ns (Typ) |
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| ACS03DMSR Pb-Free | ACS03DMSR Cross Reference | ACS03DMSR Schematic | ACS03DMSR Distributor |
| ACS03DMSR Application Notes | ACS03DMSR RoHS | ACS03DMSR Circuits | ACS03DMSR footprint |
