90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET

The AGR09090EF is a High-Voltage gold-metalized, lat- erally diffused metal oxide semiconductor (LDMOS) RF Power Transistor suitable for global system for mobile com- munication (GSM), enhanced data for global evolution (EDGE), cellular, and multicarrier class AB power Amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance and reliability. Packaged in an industry-standard package and capable of delivering a minimum output power of 90 W, it is ideally suited for today's Wireless base station RF power Amplifier applications. By TriQuint Semiconductor
AGR09090E 's PackagesAGR09090E 's pdf datasheet



AGR09090E Pinout, Pinouts
AGR09090E pinout,Pin out
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