90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFETThe AGR09090EF is a High-Voltage gold-metalized, lat-
erally diffused metal oxide semiconductor (LDMOS) RF
Power Transistor suitable for global system for mobile com-
munication (GSM), enhanced data for global evolution
(EDGE), cellular, and multicarrier class AB power Amplifier
applications. This device is manufactured on an advanced
LDMOS technology, offering state-of-the-art performance
and reliability. Packaged in an industry-standard package
and capable of delivering a minimum output power of 90 W,
it is ideally suited for today's Wireless base station RF
power Amplifier applications. By TriQuint Semiconductor
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| AGR09090E Pb-Free | AGR09090E Cross Reference | AGR09090E Schematic | AGR09090E Distributor |
| AGR09090E Application Notes | AGR09090E RoHS | AGR09090E Circuits | AGR09090E footprint |
