130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFETThe AGR09130E is a High-Voltage laterally diffused
metal oxide semiconductor (LDMOS) RF Power tran-
sistor suitable for cellular band, code division multiple
access (CDMA), global system for mobile communi-
cation (GSM), enhanced data for global evolution
(EDGE), and time division multiple access (TDMA)
single and multicarrier class AB Wireless base station
Amplifier applications. This device is manufactured
on an advanced LDMOS technology offering state-
of-the-art performance, and reliability. Packaged in
an industry-standard package incorporating internal
matching and capable of delivering a minimum out-
put power of 130 W, it is ideally suited for today's RF
power Amplifier applications. By TriQuint Semiconductor
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| AGR09130E Pb-Free | AGR09130E Cross Reference | AGR09130E Schematic | AGR09130E Distributor |
| AGR09130E Application Notes | AGR09130E RoHS | AGR09130E Circuits | AGR09130E footprint |
