130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET

The AGR09130E is a High-Voltage laterally diffused metal oxide semiconductor (LDMOS) RF Power tran- sistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communi- cation (GSM), enhanced data for global evolution (EDGE), and time division multiple access (TDMA) single and multicarrier class AB Wireless base station Amplifier applications. This device is manufactured on an advanced LDMOS technology offering state- of-the-art performance, and reliability. Packaged in an industry-standard package incorporating internal matching and capable of delivering a minimum out- put power of 130 W, it is ideally suited for today's RF power Amplifier applications. By TriQuint Semiconductor
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AGR09130E Pinout, Pinouts
AGR09130E pinout,Pin out
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