180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET

The AGR09180EF is a High-Voltage gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF Power Transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile Communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB Wireless base station Amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance. Packaged in an industry-standard CuW package capable of deliver- ing a minimum output power of 180 W, it is ideally suited for today's RF Power Amplifier applications. By TriQuint Semiconductor
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AGR09180E Pinout, Pinouts
AGR09180E pinout,Pin out
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