180 W, 865 Mhz-895 Mhz, N-channel E-mode, Lateral Mosfet Semiconductor

The AGR09180EF is a High-Voltage gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF Power Transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile Communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB Wireless base station Amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance. Packaged in an industry-standard CuW package capable of deliver- ing a minimum output power of 180 W, it is ideally suited for today's RF Power Amplifier applications. By TriQuint Semiconductor
AGR09180EF 's PackagesAGR09180EF 's pdf datasheet

AGR09180EF Pinout, Pinouts
AGR09180EF pinout,Pin out
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