30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor

The AGR18030EF is a High-Voltage gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF Power Field Effect Transistor (FET) suit- able for global system for mobile Communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power Amplifier applica- tions. This device is manufactured using advanced LDMOS technology offering state-of-the-art perfor- mance and reliability. It is packaged in an industry- standard package and is capable of delivering a min- imum output power of 30 W, which makes it ideally suited for today RF Power Amplifier applications. By TriQuint Semiconductor
AGR18030E 's PackagesAGR18030E 's pdf datasheet

AGR18030E Pinout, Pinouts
AGR18030E pinout,Pin out
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