45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor

The AGR18045E is a High-Voltage gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF Power Field Effect Transistor (FET) suit- able for global system for mobile Communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power Amplifier applica- tions. This device is manufactured using advanced LDMOS technology offering state-of-the-art perfor- mance and reliability. It is packaged in an industry- standard package and is capable of delivering a min- imum output power of 45 W, which makes it ideally suited for todays RF Power Amplifier applications By TriQuint Semiconductor
AGR18045E 's PackagesAGR18045E 's pdf datasheet



AGR18045E Pinout, Pinouts
AGR18045E pinout,Pin out
This is one package pinout of AGR18045E,If you need more pinouts please download AGR18045E's pdf datasheet.

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