90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor

90 W, 1930 MHz1990 MHz, PCS LDMOS RF Power Transistor The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power Field Effect Transistor (FET) suitable for per- sonal Communication service (PCS) (1930 MHz, 1990 MHz), wide-band code division multiple access (W-CDMA), global system for mobile Communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power Amplifier applications. By TriQuint Semiconductor
AGR19090E 's PackagesAGR19090E 's pdf datasheet



AGR19090E Pinout, Pinouts
AGR19090E pinout,Pin out
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