125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor

The AGR19125E is a 125 W, 28 V N-channel later- ally diffused metal oxide semiconductor (LDMOS) RF Power Field Effect Transistor (FET) suitable for personal Communication service (PCS) (1930 MHz1990 MHz), time-division multipl access (TDMA), and single-carrier or multicarrier class AB power Amplifier applications. By TriQuint Semiconductor
AGR19125E 's PackagesAGR19125E 's pdf datasheet

AGR19125E Pinout, Pinouts
AGR19125E pinout,Pin out
This is one package pinout of AGR19125E,If you need more pinouts please download AGR19125E's pdf datasheet.

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