180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor

The AGR19180EF is a 180 W, 28 V N-channel later- ally diffused metal oxide semiconductor (LDMOS) RF power Field Effect Transistor (FET) suitable for personal Communication service (PCS) (1930 MHz, 1990 MHz), code division multiple access (CDMA), global system for mobile Communication (GSM/EDGE), time division multiple access (TDMA), and single-carrier or multicarrier class AB power Amplifier applications. By TriQuint Semiconductor
AGR19180E 's PackagesAGR19180E 's pdf datasheet

AGR19180E Pinout, Pinouts
AGR19180E pinout,Pin out
This is one package pinout of AGR19180E,If you need more pinouts please download AGR19180E's pdf datasheet.

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