30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET

The AGR21030EF is a High-Voltage gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF Power Transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB Wireless base station power Amplifier applications. By TriQuint Semiconductor
AGR21030E 's PackagesAGR21030E 's pdf datasheet

AGR21030E Pinout, Pinouts
AGR21030E pinout,Pin out
This is one package pinout of AGR21030E,If you need more pinouts please download AGR21030E's pdf datasheet.

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