60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET

The AGR21060E is a High-Voltage gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor (LDMOS) RF Power Transistor suit- able for wideband code division multiple access (W-CDMA), single and multicarrier class AB Wireless base station power Amplifier applications. By TriQuint Semiconductor
AGR21060E 's PackagesAGR21060E 's pdf datasheet



AGR21060E Pinout, Pinouts
AGR21060E pinout,Pin out
This is one package pinout of AGR21060E,If you need more pinouts please download AGR21060E's pdf datasheet.

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