90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET

90 W, 2.110 GHz2.170 GHz, N-Channel E-Mode, Lateral MOSFET The AGR21090E is a High-Voltage gold-metalized, laterally diffused, metal oxide semiconductor (LDMOS) RF Power Transistor suitable for wideband code-division multiple access (W-CDMA), and single and multicarrier class AB Wireless base station power Amplifier applications. By TriQuint Semiconductor
AGR21090E 's PackagesAGR21090E 's pdf datasheet

AGR21090E Pinout, Pinouts
AGR21090E pinout,Pin out
This is one package pinout of AGR21090E,If you need more pinouts please download AGR21090E's pdf datasheet.

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