125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET

The AGR26125E is a High-Voltage gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF Power Transistor suit- able for ultrahigh-frequency (UHF) applications including multichannel multipoint distribution service (MMDS) for broadcasting and Communications By TriQuint Semiconductor
AGR26125E 's PackagesAGR26125E 's pdf datasheet

AGR26125E Pinout, Pinouts
AGR26125E pinout,Pin out
This is one package pinout of AGR26125E,If you need more pinouts please download AGR26125E's pdf datasheet.

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