ALD111933 are monolithic dual N-Channel MOSFETs matched at the factory using ALDs proven EPAD CMOS technology. These devices are intended for low voltage, small signal applications. ALD111933 MOSFETs are designed and built with exceptional device electrical characteristics matching. Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteris- tics. Each device is versatile as a circuit element and is a useful design component for a broad range of Analog applications. They are basic build- ing blocks for current sources, Differential Amplifier input stages, transmis- sion Gates and multiplexer applications. For most applications, connect V- and N/C pins to the most negative voltage potential in the system. All other pins must have voltages within these voltage limits. The ALD111933 devices are built for minimum offset voltage and differen- tial thermal response, and they are designed for switching and amplifying applications in +3.0V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. By Advanced Linear Devices Inc (ALD)
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ALD111933 Pinout, Pinouts
ALD111933 pinout,Pin out
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