Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

The AO8806 uses advanced trench technology to provide excellent RDS(ON), low Gate charge and operation with Gate voltages as low as 1.8V. This device is suitable for use as a load Switch or in PWM applications. It is ESD protected. Standard Product AO8806 is Pb-free (meets ROHS & Sony 259 specifications). By Alpha & Omega Semiconductor