Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorThe AO8806 uses advanced trench technology to
provide excellent RDS(ON), low Gate charge and
operation with Gate voltages as low as 1.8V. This
device is suitable for use as a load Switch or in PWM
applications. It is ESD protected. Standard Product
AO8806 is Pb-free (meets ROHS & Sony 259
specifications). By Alpha & Omega Semiconductor
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AO8806 Pb-Free | AO8806 Cross Reference | AO8806 Schematic | AO8806 Distributor |
AO8806 Application Notes | AO8806 RoHS | AO8806 Circuits | AO8806 footprint |