Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

The AON5810 uses advanced trench technology to provide excellent RDS(ON), low Gate charge and operation with Gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi- directional load Switch facilitated by its common-drain configuration. Standard Product AON5810 is Pb-free (meets ROHS & Sony 259 specifications). AON5810L is a Green Product ordering option. AON5810 and AON5810L are electrically identical. By Alpha & Omega Semiconductor
AON5810 's PackagesAON5810 's pdf datasheet
AON5810L




AON5810 Pinout, Pinouts
AON5810 pinout,Pin out
This is one package pinout of AON5810,If you need more pinouts please download AON5810's pdf datasheet.

AON5810 Application circuits
AON5810 circuits
This is one application circuit of AON5810,If you need more circuits,please download AON5810's pdf datasheet.


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