Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ

Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ APT50GN120B2 Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior V performance. Easy paralleling results from very tight CE(on) parameter distribution and slightly positive V temperature coef,cient. Built-in CE(on) Gate resistance ensures ultra-reliable operation. Low Gate charge simpli,es Gate drive design and minimizes losses. By Microsemi Corporation
APT50GN120B2 's PackagesAPT50GN120B2 's pdf datasheet
APT50GN120B2G




APT50GN120B2 Pinout, Pinouts
APT50GN120B2 pinout,Pin out
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