Insulated Gate Bipolar Transistor-PT High Speed

The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. By Microsemi Corporation
APT80GP60B2G 's PackagesAPT80GP60B2G 's pdf datasheet
APT80GP60B2




APT80GP60B2G Pinout, Pinouts
APT80GP60B2G pinout,Pin out
This is one package pinout of APT80GP60B2G,If you need more pinouts please download APT80GP60B2G's pdf datasheet.

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