4M X 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (10%) power supply refresh cycle (2K), and fast access times (60 and 70ns). Other features include CAS-before-RAS, RAS-only refresh, self- refresh operation (128ms refresh period), and Hidden refresh capabilities. This 4M x 4 Fast Page Mode DRAM is fabricated using an advanced CMOS process to realize high bandwidth, low power consumption and high reliability. It may be used as main memory for high level computers, micro- computers and personal computers. By Austin Semiconductor, Inc.
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AS4LC4M4 Pinout, Pinouts
AS4LC4M4 pinout,Pin out
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