Build In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier - Hitachi Semiconductor

Build In Biasing Circuit Mos FET Ic Uhf RF Amplifier BB302C Hitachi Semiconductor, Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) Withstanding to ESD; Build in ESD absorbing Diode Withstand up to 240V at C=200pF, Rs=0 conditions. Provide mini mold packages; CMPAK-4(SOT-343mod) By Renesas Technology
BB302C 's PackagesBB302C 's pdf datasheet



BB302C Pinout, Pinouts
BB302C pinout,Pin out
This is one package pinout of BB302C,If you need more pinouts please download BB302C's pdf datasheet.

BB302C Application circuits
BB302C circuits
This is one application circuit of BB302C,If you need more circuits,please download BB302C's pdf datasheet.


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