Build In Biasing Circuit Mos Fet Ic Vhf/uhf Rf Amplifier - Hitachi Semiconductor

Build In Biasing Circuit Mos FET Ic Vhf/uhf RF Amplifier BB303M Hitachi Semiconductor, Build in Biasing Circuit; To reduce using parts cost & PC board space. High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz) Withstanding to ESD; Build in ESD absorbing Diode Withstand up to 250V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4 (SOT-143 var.) By Renesas Technology
BB303M 's PackagesBB303M 's pdf datasheet

BB303M Pinout, Pinouts
BB303M pinout,Pin out
This is one package pinout of BB303M,If you need more pinouts please download BB303M's pdf datasheet.

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