UMTS LNA Wide Band Low Noise Amplifier With Integrated 2kV HBM ESD ProtectionUMTS LNA BGA622L7 The BGA622L7 is a wide band low noise
Amplifier based on Infineon Technologies
Silicon Germanium Technology B7HF. The
out-pin is simultaneously used for RF out
and On/Off Switch This functionality CAN be
accessed using a RF-Choke at the Out pin,
where a DC level of 0 V or an open switches
the device on and a DC level of Vcc
switches the device off. While the device is
switched off, it provides an insertion loss of
26 dB together with a high IIP3 up to 24
dBm at GPs frequencies. By Infineon Technologies Corporation
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| BGA622L7 Pb-Free | BGA622L7 Cross Reference | BGA622L7 Schematic | BGA622L7 Distributor |
| BGA622L7 Application Notes | BGA622L7 RoHS | BGA622L7 Circuits | BGA622L7 footprint |
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