UMTS LNA Low Power Tri-Band UMTS LNAUMTS LNA BGA734L16 Low Power Tri-Band UMTS LNA The BGA734L16 is a highly flexible tri-band (2100, 1900, 850/800 MHz) Low Noise Amplifier MMIC for worldwide
use. Based on Infineons proprietary and cost-effective SiGe:C technology, the BGA734L16 features dynamic gai
control, temperature stabilization, standby mode, and 1 kV ESD protection on-chip and matching off chip. Because
the matching is off chip, the 1900 MHz path CAN be converted into a 2100 MHz path and vice versa by optimizing
the input and output matching network. This document specifies device performance for the most common band
combination - UMTS bands I, II, and V. By Infineon Technologies Corporation
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| BGA734L16 Pb-Free | BGA734L16 Cross Reference | BGA734L16 Schematic | BGA734L16 Distributor |
| BGA734L16 Application Notes | BGA734L16 RoHS | BGA734L16 Circuits | BGA734L16 footprint |
