High Linearity Tri-Band UMTS LNAThe BGA735L16 is a highly flexible, high linearity tri-band (2100, 1900/1800/2100, 800/900 MHz) low noise
Amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the
BGA735L16 uses an advanced biasing concept in order to achieve high linearity.
The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection on-
chip as well as matching off chip. Because the matching is off chip, different UMTS bands CAN be easily applied.
For example, the 1900 MHz path CAN be converted into a 2100 MHz path and vice versa by optimizing the input
and output matching network. By Infineon Technologies Corporation
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| BGA735L16 Pb-Free | BGA735L16 Cross Reference | BGA735L16 Schematic | BGA735L16 Distributor |
| BGA735L16 Application Notes | BGA735L16 RoHS | BGA735L16 Circuits | BGA735L16 footprint |
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