BLF4G10-160 UHF Power LDMOS Transistor

BLF4G10-160 UHF power LDMOS transistor 160 W LDMOS Power Transistor for base station applications at frequencies from 800 MHz to 1000 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
By NXP Semiconductors
BLF4G10-160 's PackagesBLF4G10-160 's pdf datasheet

BLF4G10-160 Pinout, Pinouts
BLF4G10-160 pinout,Pin out
This is one package pinout of BLF4G10-160,If you need more pinouts please download BLF4G10-160's pdf datasheet.

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