2048Kx8 Nonvolatile SRAM, 10% Voltage Tolerance
The CMOS BQ4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM
The control circuitry constantly monitors the single 5V supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent an inadvertent write operation.
At this time the integral energy source is switched on to sustain the memory until after VCC returns valid.
The BQ4017 uses extremely low standby current CMOS SRAMs coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM
The BQ4017 has the same Interface as industry-standard SRAMs and requires no external circuitry.
By Texas Instruments
|BQ4017YMC-70||Texas Instruments||2MX8 NON-VOLATILE SRAM MODULE, 70ns, DMA36, MODULE, DIP-36|
|BQ4017YMB-70||Texas Instruments||2MX8 NON-VOLATILE SRAM, 70ns, DMA36|
|BQ4017Y Pb-Free||BQ4017Y Cross Reference||BQ4017Y Schematic||BQ4017Y Distributor|
|BQ4017Y Application Notes||BQ4017Y RoHS||BQ4017Y Circuits||BQ4017Y footprint|