RTC Module With 32Kx8 NVSRAM
The BQ4830Y RTC Module is RTC Module With 32Kx8 NVSRAM a non-volatile 262,144-bit SRAM organized as 32,768 words by 8 bits with an integral accessible Real-Time Clock
The device combin 612f es an internal lithium battery, quartz crystal, Clock and power-fail chip, and a full CMOS SRAM in a plastic 28-pin DIP module. The RTC Module directly replaces industry-standard SRAMs and also fits into many EPROM and EEPROM sockets without any requirement for special write Timing or limitations on the number of write cycles.
Registers for the Real-Time Clock and Clock calibration are located in Registers 7FF8h7FFFh of the memory array.
The Clock Registers are dual-port read/write SRAM locations that are updated once per second by a Clock control circuit from the internal Clock Counters The dual-port Registers allow Clock updates to occur without interrupting normal access to the rest of the SRAM array.
The BQ4830Y also contains a power fail-detect circuit. The circuit deselects the device whenever VCC falls below tolerance, providing a high degree of data security. The battery is electrically isolated when shipped from the factory to provide maximum battery capacity. The battery remains disconnected until the first application of VCC.
By Texas Instruments
|BQ4830Y Pb-Free||BQ4830Y Cross Reference||BQ4830Y Schematic||BQ4830Y Distributor|
|BQ4830Y Application Notes||BQ4830Y RoHS||BQ4830Y Circuits||BQ4830Y footprint|