Very Low Power CMOS SRAM 64K X 16 Bit

The BS616LV1010 is a high performance, very low power CMOS Static Random Access Memory organized as 65,536 by 16 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.02uA at 3.0V/25O C and maximum access time of 55ns at 2.7V/85O C. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state output drivers. The BS616LV1010 has an Automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1010 is available in DICE form, JEDEC standard 44-pin TSOP II and 48-ball BGA package. By Brillance Semiconductor
BS616LV1010 's PackagesBS616LV1010 's pdf datasheet
BS616LV1010DC-70
BS616LV1010EC-70
BS616LV1010AC-55
BS616LV1010EC-55
BS616LV1010AI-70
BS616LV1010EI-70
BS616LV1010AI-55
BS616LV1010EI-55
BS616LV1010ACP70
BS616LV1010ECP70
BS616LV1010ACP55
BS616LV1010ECP55
BS616LV1010AIP70
BS616LV1010EIP70
BS616LV1010AIP55
BS616LV1010EIP55
BS616LV1010ACG70
BS616LV1010ECG70
BS616LV1010ACG55
BS616LV1010ECG55
BS616LV1010AIG70
BS616LV1010EIG70
BS616LV1010AIG55
BS616LV1010EIG55
BS616LV1010AC-70




BS616LV1010 Pinout, Pinouts
BS616LV1010 pinout,Pin out
This is one package pinout of BS616LV1010,If you need more pinouts please download BS616LV1010's pdf datasheet.

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BS616LV1010 Application Notes BS616LV1010 RoHS BS616LV1010 Circuits BS616LV1010 footprint
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