Very Low Power CMOS SRAM 64K X 16 BitThe BS616LV1010 is a high performance, very low power CMOS
Static Random Access Memory organized as 65,536 by 16 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.02uA at 3.0V/25O
C and maximum access time of 55ns at
2.7V/85O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BS616LV1010 has an Automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV1010 is available in DICE form, JEDEC standard
44-pin TSOP II and 48-ball BGA package. By Brillance Semiconductor
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BS616LV1010 Pb-Free | BS616LV1010 Cross Reference | BS616LV1010 Schematic | BS616LV1010 Distributor |
BS616LV1010 Application Notes | BS616LV1010 RoHS | BS616LV1010 Circuits | BS616LV1010 footprint |