Very Low Power CMOS SRAM 128K X 16 Bit

The BS616LV2016 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 by 16 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.1uA at 3.0V/25O C and maximum access time of 55ns at 3.0V/85O C. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state output drivers. The BS616LV2016 has an Automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2016 is available in DICE form, JEDEC standard 44-pin TSOP II package and 48-ball BGA package. By Brillance Semiconductor
BS616LV2016 's PackagesBS616LV2016 's pdf datasheet
BS616LV2016EC-70
BS616LV2016EC-55
BS616LV2016EI-70
BS616LV2016EI-55
BS616LV2016ECP70
BS616LV2016ECP55
BS616LV2016EIP70
BS616LV2016EIP55
BS616LV2016ECG70
BS616LV2016ECG55
BS616LV2016EIG70
BS616LV2016EIG55




BS616LV2016 Pinout, Pinouts
BS616LV2016 pinout,Pin out
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BS616LV2016 Application Notes BS616LV2016 RoHS BS616LV2016 Circuits BS616LV2016 footprint