Very Low Power CMOS SRAM 128K X 16 Bit

The BS616LV2019 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 by 16 bits and operates form a wide range of 2.4V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.3uA at 3.0V/25O C and maximum access time of 55ns at 2.7V/85O C. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state output drivers. The BS616LV2019 has an Automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2019 is available in DICE form, JEDEC standard 48-pin TSOP Type I package and 48-ball BGA package. By Brillance Semiconductor
BS616LV2019 's PackagesBS616LV2019 's pdf datasheet
BS616LV2019DC-70
BS616LV2019TC-70
BS616LV2019AC-55
BS616LV2019TC-55
BS616LV2019AI-70
BS616LV2019TI-70
BS616LV2019AI-55
BS616LV2019TI-55
BS616LV2019ACP70
BS616LV2019TCP70
BS616LV2019ACP55
BS616LV2019TCP55
BS616LV2019AIP70
BS616LV2019TIP70
BS616LV2019AIP55
BS616LV2019TIP55
BS616LV2019ACG70
BS616LV2019TCG70
BS616LV2019ACG55
BS616LV2019TCG55
BS616LV2019AIG70
BS616LV2019TIG70
BS616LV2019AIG55
BS616LV2019TIG55




BS616LV2019 Pinout, Pinouts
BS616LV2019 pinout,Pin out
This is one package pinout of BS616LV2019,If you need more pinouts please download BS616LV2019's pdf datasheet.

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BS616LV2019 Application Notes BS616LV2019 RoHS BS616LV2019 Circuits BS616LV2019 footprint
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