Very Low Power CMOS SRAM 256K X 16 Bit

The BS616LV4017 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 by 16 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.25uA at 3.0V/25O C and maximum access time of 55ns at 3.0V/85O C. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state output drivers. The BS616LV4017 has an Automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV4017 is available in DICE form, JEDEC standard 44-pin TSOP II and 48-ball BGA package. By Brillance Semiconductor
BS616LV4017 's PackagesBS616LV4017 's pdf datasheet
BS616LV4017DC-70
BS616LV4017EC-70
BS616LV4017AC-55
BS616LV4017EC-55
BS616LV4017AI-70
BS616LV4017EI-70
BS616LV4017AI-55
BS616LV4017EI-55
BS616LV4017ACP70
BS616LV4017ECP70
BS616LV4017ACP55
BS616LV4017ECP55
BS616LV4017AIP70
BS616LV4017EIP70
BS616LV4017AIP55
BS616LV4017EIP55
BS616LV4017ACG70
BS616LV4017ECG70
BS616LV4017ACG55
BS616LV4017ECG55
BS616LV4017AIG70
BS616LV4017EIG70
BS616LV4017AIG55
BS616LV4017EIG55




BS616LV4017 Pinout, Pinouts
BS616LV4017 pinout,Pin out
This is one package pinout of BS616LV4017,If you need more pinouts please download BS616LV4017's pdf datasheet.

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BS616LV4017 Application Notes BS616LV4017 RoHS BS616LV4017 Circuits BS616LV4017 footprint
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