Very Low Power CMOS SRAM 512K X 16 Bit

The BS616LV8017 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 by 16 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.8uA at 3.0V/25O C and maximum access time of 55ns at 3.0V/85O C. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state output drivers. The BS616LV8017 has an Automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV8017 is available in DICE form, JEDEC standard 44-pin TSOP II and 48-ball BGA package. By Brillance Semiconductor
BS616LV8017 's PackagesBS616LV8017 's pdf datasheet
BS616LV8017DC-70
BS616LV8017EC-70
BS616LV8017FC-55
BS616LV8017EC-55
BS616LV8017FI-70
BS616LV8017EI-70
BS616LV8017FI-55
BS616LV8017EI-55
BS616LV8017FCP70
BS616LV8017ECP70
BS616LV8017FCP55
BS616LV8017ECP55
BS616LV8017FIP70
BS616LV8017EIP70
BS616LV8017FIP55
BS616LV8017EIP55
BS616LV8017FCG70
BS616LV8017ECG70
BS616LV8017FCG55
BS616LV8017ECG55
BS616LV8017FIG70
BS616LV8017EIG70
BS616LV8017FIG55
BS616LV8017EIG55




BS616LV8017 Pinout, Pinouts
BS616LV8017 pinout,Pin out
This is one package pinout of BS616LV8017,If you need more pinouts please download BS616LV8017's pdf datasheet.

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