Ultra Low Power CMOS SRAM 128K X 16 Bit

The BS616UV2019 is a high performance, ultra low power CMOS Static Random Access Memory organized as 131,072 by 16 bits and operates form a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.2uA at 2.0V/25O C and maximum access time of 85ns at 85O C. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state output drivers. The BS616UV2019 has an Automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616UV2019 is available in DICE form, JEDEC standard 48-pin TSOP Type I package and 48-ball BGA package. By Brillance Semiconductor
BS616UV2019 's PackagesBS616UV2019 's pdf datasheet
BS616UV2019DC-85
BS616UV2019TC-85
BS616UV2019AC-10
BS616UV2019DC-10
BS616UV2019TC-10
BS616UV2019AI-85
BS616UV2019TI-85
BS616UV2019AI-10
BS616UV2019TI-10
BS616UV2019ACP85
BS616UV2019TCP85
BS616UV2019ACP10
BS616UV2019TCP10
BS616UV2019AIP85
BS616UV2019TIP85
BS616UV2019AIP10
BS616UV2019TIP10
BS616UV2019ACG85
BS616UV2019TCG85
BS616UV2019ACG10
BS616UV2019TCG10
BS616UV2019AIG85
BS616UV2019TIG85
BS616UV2019AIG10
BS616UV2019TIG10




BS616UV2019 Pinout, Pinouts
BS616UV2019 pinout,Pin out
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