High Voltage Fast-switching Npn Power TransistorThe BUL742 is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintening the wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
Transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast. By STMicroelectronics
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BUL742 Pb-Free | BUL742 Cross Reference | BUL742 Schematic | BUL742 Distributor |
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