IR LASERMODULE

IR LASERMODULE C2021-F1 By Roithner LaserTechnik GmbH
Part Manufacturer Description Datasheet Samples
BFS25A T/R NXP Semiconductors NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; fT: 5 GHz; Frequency: 1.8 MHz; GUM @ f1: 13 dB; IC: 6.5 mA; Noise figure: 1.8@f1 dB; Ptot: 32 mW; Polarity: NPN ; VCEO max: 5 V
PRF949 T/R NXP Semiconductors UHF wideband transistor - @ f1: 1000 ; fT: 9 GHz; GUM @ f1: 16 dB; IC: 50 mA; Noise figure: 1.5@f1 dB; Ptot: 150 mW; Polarity: NPN ; VCEO max: 10 V
BFQ149 T/R NXP Semiconductors PNP 5 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 5 GHz; Frequency: 3.75 MHz; GUM @ f1: 12 dB; IC: 100 mA; Noise figure: 3.75@f1 dB; Ptot: 1000 mW; Polarity: PNP ; VCEO max: 15 V
BFR505T T/R NXP Semiconductors NPN 9 GHz wideband transistor - @ f1: 900 ; @ IC: 18 mA; fT: 9 GHz; GUM @ f1: 17 dB; IC: 18 mA; Noise figure: 1.2@f1 dB; Ptot: 150 mW; Polarity: NPN
BFT25A T/R NXP Semiconductors NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; fT: 5 GHz; Frequency: 1.8 MHz; GUM @ f1: 15 dB; IC: 6.5 mA; Noise figure: 1.8@f1 dB; Ptot: 32 mW; Polarity: NPN ; VCEO max: 5 V
BFG520/X T/R NXP Semiconductors NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ IC: 20 mA; fT: 9 GHz; Frequency: 1.9 MHz; GUM: 19 dB; GUM @ f1: 19 dB; GUM @ f2: 13 dB; Gain @ 1.9 GHz: 10 dB; Gain @ 900 Mhz: 17 dB; IC: 70 mA; ITO
BFQ67W T/R NXP Semiconductors NPN 8 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 8 GHz; Frequency: 2.7 MHz; GUM @ f1: 13 dB; GUM @ f2: 8 dB; IC: 50 mA; Noise figure: 2.7@f22@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 10 V
BFR93A T/R NXP Semiconductors NPN 6 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 30 mA; fT: 6 GHz; Frequency: 3 MHz; GUM @ f1: 13 dB; Gain @ 900 Mhz: 13 dB; IC: 35 mA; Noise figure: 3@f21.9@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket
BFS505 T/R NXP Semiconductors NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ IC: 5 mA; fT: 9 GHz; Frequency: 1.9 MHz; GUM @ f1: 17 dB; GUM @ f2: 10 dB; Gain @ 1.9 GHz: 10 dB; Gain @ 900 Mhz: 17 dB; IC: 18 mA; ITO: 10 dBm; Noise figure:
BLT81 T/R NXP Semiconductors UHF power transistor - @ f1: 900 ; Efficiency % min: 60 ; Efficiency % typ: 77 ; Frequency: 900 MHz; GUM @ f1: 6.5 dB; IC: 500 mA; Load power: 1.2 W; Ptot: 2000 mW; Polarity: NPN ; Power gain: 6 dB; telecom system: analog cellular ; Thermal Resi
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C2021-F1 Pinout, Pinouts
C2021-F1 pinout,Pin out
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