High Frequency NPN Transistor Array

The CA3127 consists of five general purpose silicon NPN Transistors on a common monolithic substrate. Each of the completely isolated Transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual Transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five Transistors
By Intersil Corporation
Part Manufacturer Description Datasheet Samples
CA3127E Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.02A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001BB, MS-001BB, 16 PIN
CA3127M96 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.02A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-012AC, MS-012AC, 16 PIN
CA3127M Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.02A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-012AC, MS-012AC, 16 PIN
CA3127 's PackagesCA3127 's pdf datasheet
CA3127M SOIC
CA3127MZ SOIC
CA3127E PDIP
CA3127M96 SOIC




CA3127 Pinout, Pinouts
CA3127 pinout,Pin out
This is one package pinout of CA3127,If you need more pinouts please download CA3127's pdf datasheet.

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