RF Semiconductors

870 MHz GaAs CATV Power Doubler Amplifier (See-AZ part # for Pb-free)
By California Eastern Laboratories
Part Manufacturer Description Datasheet Samples
ADS7884SDBVT Texas Instruments 2.7V-5.5V, 10 Bit, 3MSPS, Serial ADC 6-SOT-23 -40 to 125
ADS7884SDBVR Texas Instruments 2.7V-5.5V, 10 Bit, 3MSPS, Serial ADC 6-SOT-23 -40 to 125
PMP7884 Texas Instruments Dual Phase Synchronous Buck
ISL78843ASRHVD Renesas Electronics Corporation $ Electrically screened to DLA SMD # 5962-07249 $ QML qualified per MIL-PRF-38535 requirements $ 1A MOSFET gate driver $ 90μA typical start-up current, 125μA maximum $ 35ns propagation delay current sense to output $ Fast transient response with peak current-mode control $ 9V to 13.2V operation $ Adjustable switching frequency to 1MHz $ 50ns rise and fall times with 1nF output load $ Trimmed timing capacitor discharge current for accurate dead time/maximum duty cycle control $ 1.5MHz bandwidth error amplifier $ Tight tolerance voltage reference over line, load, and temperature $ ±3% current limit threshold $ Pb-free available (RoHS compliant) $ Radiation environment: $$ High dose rate (50 - 300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 100krad(Si)*
* Product capability established by initial characterization. The “EH” version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate. (Applies to ISL7884xASEH only)
ISL78840ASRHVD Renesas Electronics Corporation $ Electrically screened to DLA SMD # 5962-07249 $ QML qualified per MIL-PRF-38535 requirements $ 1A MOSFET gate driver $ 90μA typical start-up current, 125μA maximum $ 35ns propagation delay current sense to output $ Fast transient response with peak current-mode control $ 9V to 13.2V operation $ Adjustable switching frequency to 1MHz $ 50ns rise and fall times with 1nF output load $ Trimmed timing capacitor discharge current for accurate dead time/maximum duty cycle control $ 1.5MHz bandwidth error amplifier $ Tight tolerance voltage reference over line, load, and temperature $ ±3% current limit threshold $ Pb-free available (RoHS compliant) $ Radiation environment: $$ High dose rate (50 - 300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 100krad(Si)*
* Product capability established by initial characterization. The “EH” version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate. (Applies to ISL7884xASEH only)
ISL78843ASRHVX Renesas Electronics Corporation $ Electrically screened to DLA SMD # 5962-07249 $ QML qualified per MIL-PRF-38535 requirements $ 1A MOSFET gate driver $ 90μA typical start-up current, 125μA maximum $ 35ns propagation delay current sense to output $ Fast transient response with peak current-mode control $ 9V to 13.2V operation $ Adjustable switching frequency to 1MHz $ 50ns rise and fall times with 1nF output load $ Trimmed timing capacitor discharge current for accurate dead time/maximum duty cycle control $ 1.5MHz bandwidth error amplifier $ Tight tolerance voltage reference over line, load, and temperature $ ±3% current limit threshold $ Pb-free available (RoHS compliant) $ Radiation environment: $$ High dose rate (50 - 300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 100krad(Si)*
* Product capability established by initial characterization. The “EH” version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate. (Applies to ISL7884xASEH only)
ISL78840ASEHVF Renesas Electronics Corporation $ Electrically screened to DLA SMD # 5962-07249 $ QML qualified per MIL-PRF-38535 requirements $ 1A MOSFET gate driver $ 90μA typical start-up current, 125μA maximum $ 35ns propagation delay current sense to output $ Fast transient response with peak current-mode control $ 9V to 13.2V operation $ Adjustable switching frequency to 1MHz $ 50ns rise and fall times with 1nF output load $ Trimmed timing capacitor discharge current for accurate dead time/maximum duty cycle control $ 1.5MHz bandwidth error amplifier $ Tight tolerance voltage reference over line, load, and temperature $ ±3% current limit threshold $ Pb-free available (RoHS compliant) $ Radiation environment: $$ High dose rate (50 - 300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 100krad(Si)*
* Product capability established by initial characterization. The “EH” version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate. (Applies to ISL7884xASEH only)
ISL78845ASRHQD Renesas Electronics Corporation $ Electrically screened to DLA SMD # 5962-07249 $ QML qualified per MIL-PRF-38535 requirements $ 1A MOSFET gate driver $ 90μA typical start-up current, 125μA maximum $ 35ns propagation delay current sense to output $ Fast transient response with peak current-mode control $ 9V to 13.2V operation $ Adjustable switching frequency to 1MHz $ 50ns rise and fall times with 1nF output load $ Trimmed timing capacitor discharge current for accurate dead time/maximum duty cycle control $ 1.5MHz bandwidth error amplifier $ Tight tolerance voltage reference over line, load, and temperature $ ±3% current limit threshold $ Pb-free available (RoHS compliant) $ Radiation environment: $$ High dose rate (50 - 300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 100krad(Si)*
* Product capability established by initial characterization. The “EH” version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate. (Applies to ISL7884xASEH only)
ISL78840ASRHVF Renesas Electronics Corporation $ Electrically screened to DLA SMD # 5962-07249 $ QML qualified per MIL-PRF-38535 requirements $ 1A MOSFET gate driver $ 90μA typical start-up current, 125μA maximum $ 35ns propagation delay current sense to output $ Fast transient response with peak current-mode control $ 9V to 13.2V operation $ Adjustable switching frequency to 1MHz $ 50ns rise and fall times with 1nF output load $ Trimmed timing capacitor discharge current for accurate dead time/maximum duty cycle control $ 1.5MHz bandwidth error amplifier $ Tight tolerance voltage reference over line, load, and temperature $ ±3% current limit threshold $ Pb-free available (RoHS compliant) $ Radiation environment: $$ High dose rate (50 - 300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 100krad(Si)*
* Product capability established by initial characterization. The “EH” version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate. (Applies to ISL7884xASEH only)
ISL78841ASRHVD Renesas Electronics Corporation $ Electrically screened to DLA SMD # 5962-07249 $ QML qualified per MIL-PRF-38535 requirements $ 1A MOSFET gate driver $ 90μA typical start-up current, 125μA maximum $ 35ns propagation delay current sense to output $ Fast transient response with peak current-mode control $ 9V to 13.2V operation $ Adjustable switching frequency to 1MHz $ 50ns rise and fall times with 1nF output load $ Trimmed timing capacitor discharge current for accurate dead time/maximum duty cycle control $ 1.5MHz bandwidth error amplifier $ Tight tolerance voltage reference over line, load, and temperature $ ±3% current limit threshold $ Pb-free available (RoHS compliant) $ Radiation environment: $$ High dose rate (50 - 300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 100krad(Si)*
* Product capability established by initial characterization. The “EH” version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate. (Applies to ISL7884xASEH only)
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MC-7884 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
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MC-7884 Pb-Free MC-7884 Cross Reference MC-7884 Schematic MC-7884 Distributor
MC-7884 Application Notes MC-7884 RoHS MC-7884 Circuits MC-7884 footprint