RF Semiconductors

NEC's NE5511279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplier for 7.5 V Radio systems. Die are manu- factured using NEC's NEWMOS1 technology and housed in a surface mount package. This device CAN deliver 40.0 dBm output power with 48% power added efciency at 900 MHz using a 7.5 V supply voltage. By California Eastern Laboratories
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