RF SemiconductorsNEC's NE5511279A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the transmission
power amplier for 7.5 V Radio systems. Die are manu-
factured using NEC's NEWMOS1 technology and housed in
a surface mount package. This device CAN deliver 40.0 dBm
output power with 48% power added efciency at 900 MHz
using a 7.5 V supply voltage. By California Eastern Laboratories
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| NE5511279A Pb-Free | NE5511279A Cross Reference | NE5511279A Schematic | NE5511279A Distributor |
| NE5511279A Application Notes | NE5511279A RoHS | NE5511279A Circuits | NE5511279A footprint |
