RF SemiconductorsNEC's NE5520279A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the power amplier
for mobile and xed Wireless applications. Die are manu-
factured using NEC's NEWMOS technology (NEC's 0.6 m
WSi Gate lateral MOSFET) and housed in a surface mount
package. By California Eastern Laboratories
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| NE5520279A Pb-Free | NE5520279A Cross Reference | NE5520279A Schematic | NE5520279A Distributor |
| NE5520279A Application Notes | NE5520279A RoHS | NE5520279A Circuits | NE5520279A footprint |
