RF Semiconductors

NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power amplier for mobile and xed Wireless applications. Die are manu- factured using NEC's NEWMOS technology (NEC's 0.6 m WSi Gate lateral MOSFET) and housed in a surface mount package. By California Eastern Laboratories
NE5520279A 's PackagesNE5520279A 's pdf datasheet



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