MEDIUM POWER SILICON LD-MOSFET

NEC's NE5520379A is an N-Channel silicon Power MOSFET specially designed as the transmission power amplier for 3.2 V GSM900 handsets. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi Gate lateral MOS- FET) and housed in a surface mount package. This device CAN deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the Gate voltage as a power control function. By California Eastern Laboratories
NE5520379A 's PackagesNE5520379A 's pdf datasheet



NE5520379A Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
NE5520379A circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

NE5520379A Pb-Free NE5520379A Cross Reference NE5520379A Schematic NE5520379A Distributor
NE5520379A Application Notes NE5520379A RoHS NE5520379A Circuits NE5520379A footprint